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PD -95441
SMPS MOSFET
Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free
l
IRF6218PBF
HEXFET(R) Power MOSFET
VDSS
RDS(on) max
ID
-27A
-150V 150m:@VGS = -10V
Benefits
l l
D
l
Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
G S
TO-220AB
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
-150 20 -27 -19 -110 250 1.6 8.2 -55 to + 175
Units
V A
c
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
W W/C V/ns C
h
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case
g
Typ.
Max.
0.61 --- 62
Units
C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
g
g
--- 0.50 ---
Notes through are on page 7
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1
06/28/04
IRF6218PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-150 --- --- -3.0 --- --- --- --- --- -0.17 120 --- --- --- --- --- --- --- 150 -5.0 -25 -250 -100 100 nA V
Conditions
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA m VGS = -10V, ID = -16A V A
f
VDS = VGS, ID = -250A VDS = -120V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150C VGS = -20V VGS = 20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 71 21 32 21 70 35 30 2210 370 89 2220 170 340 --- 110 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = -16A
Conditions
VDS = -50V, ID = -16A VDS = -120V VGS = -10V VDD = -75V ID = -16A RG = 3.9 VGS = -10V VGS = 0V VDS = -25V = 1.0MHz VGS = 0V, VDS = -1.0V, = 1.0MHz VGS = 0V, VDS = -120V, = 1.0MHz VGS = 0V, VDS = 0V to -120V
f f
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 210 -16 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 150 860 -27 A -110 -1.6 --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = -16A, VGS = 0V
f
TJ = 25C, IF = -16A, VDD = -25V di/dt = -100A/s
f
2
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IRF6218PBF
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
1000
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
-ID, Drain-to-Source Current (A)
100
10
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
1 -4.5V 0.1
1
-4.5V
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current ()
ID = -27A VGS = -10V
2.0
T J = 25C
T J = 175C
10
1.5
1.0
1.0 2 4 6
VDS = 50V 60s PULSE WIDTH 8 10 12
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-V GS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF6218PBF
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12.0 ID= -16A
-V GS, Gate-to-Source Voltage (V)
10.0
VDS= 120V VDS= 75V VDS= 30V
10000
C, Capacitance(pF)
8.0 6.0
Ciss
1000
Coss
100
4.0
Crss
2.0
10 1 10 100
0.0 0 10 20 30 40 50 60 70 80
-V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00 T J = 175C
10.00
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10 Tc = 25C Tj = 175C Single Pulse 1 1 10 100
100sec
1.00
T J = 25C
1msec 10msec 1000
VGS = 0V 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -V SD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF6218PBF
30
V DS
25
-I D, Drain Current (A)
RD
VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
15
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
Ri (C/W) i (sec) 0.264 0.000285 0.206 0.140 0.001867 0.013518
1
0.01
2
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
20
VDD
5
IRF6218PBF
RDS (on) , Drain-to-Source On Resistance (m )
400
RDS(on) , Drain-to -Source On Resistance (m)
1000 900 800 700 600 500 400 300 200 100 0 4 5 6 7 8 9 10 11 12
350
300 VGS = -10V 250
ID = -27A
200
150
100 0 20 40 60 80 -I D , Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance vs. Gate Voltage
50K 12V .2F .3F
-VGS
QGS
+ D.U.T. VDS
QG QGD
900
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
-3mA
800 700 600 500 400 300 200 100 0
Charge
IG
ID
ID -4.6A -6.3A BOTTOM -16A TOP
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
L
VDS
I AS
RG
D.U.T
IAS
VDD A DRIVER
-20V
tp
0.01
tp V(BR)DSS
15V
25
50
75
100
125
150
175
Starting T J , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF6218PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT ERNAT IONAL RE CT IFIER LOGO AS S EMB LY LOT CODE PART NUMB ER
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.6mH, RG = 25, IAS = -17A.
ISD -17A, di/dt -520A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Rq is measured at TJ of approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04
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